| PART |
Description |
Maker |
| HGT1S7N60B3DS HGTP7N60B3D FN4413 |
14 A, 600 V, N-CHANNEL IGBT, TO-263AB
14A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
3.3V 72-mc CPLD
14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| ITH08F06G ITH08F06 ITH08F06B |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-252AA
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-220AB
HIGH - SPEED POWERLINE N - CHANNEL IGBT
|
MITEL[Mitel Networks Corporation]
|
| HGT1S7N60B3S HGTP7N60B3 HGT1S7N60B3S9A HGTD7N60B3S |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|7A一（c）|63AB
14A, 600V, UFS Series N-Channel IGBTs
|
Cypress Semiconductor, Corp.
Fairchild Semiconductor
|
| HGT1S7N60C3DS9A |
14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
|
Fairchild Semiconductor
|
| IRGBC30K |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A)
|
IRF[International Rectifier]
|
| JANTXV2N6756 IRF130 JANTX2N6756 |
14 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.18ohm, Id=14A)
TRANSISTORS N-CHANNEL(Vdss=100V/ Rds(on)=0.18ohm/ Id=14A)
|
IRF[International Rectifier]
|
| IRGS14B40L |
14A, Voltage Clamped 400V IGBT(14A,电压箝位400V双极型晶体管)
|
International Rectifier
|
| STB15NK50Z STP15NK50Z STP15NK50ZFP STP15NK50Z07 ST |
14 A, 500 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
N-channel 500V - 0.30楼? - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESH垄芒 Power MOSFET
N-channel 500V - 0.30Ω - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESH Power MOSFET
N-channel 500V - 0.30ヘ - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESH⑩ Power MOSFET
|
STMicroelectronics
|
| BUZ71 |
14A/ 50V/ 0.100 Ohm/ N-Channel Power MOSFET
RP30 (EW) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 12V; 4:1 Wide Input Voltage Range; 30 Watts
14A, 50V, 0.100 Ohm, N-Channel Power MOSFET
|
Intersil Corporation
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| IRGBC30K-S |
Aluminum Polymer SMT Capacitor; Capacitance: 150uF; Voltage: 4V; Case Size: 6.3x6 mm; Packaging: Tape & Reel
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A)
|
IRF[International Rectifier]
|
| FRM130D FRM130H FRM130R FN3217 |
14A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
From old datasheet system
14A/ 100V/ 0.180 Ohm/ Rad Hard/ N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
